Electronic Raman scattering on donor levels in three‐band semiconductors with direct band gaps

Abstract A theory is presented of the electronic Raman scattering on shallow donor levels in three‐band semiconductors with direct band gaps. Explicit expressions of the matrix elements of the transitions from the ground state to the first excited state and to the states of the continuous spectrum are derived. It is shown that the most important contribution to these matrix elements comes from the intermediate states in the higher conduction band and in the valence band.