1991•Japanese Journal of Applied PhysicsOpen access

A New Interpretation of the Orientation Effect in GaAs Metal Semiconductor Field Effect Transistors

Qing‐An Huang, Shi-Ji Lu, Qin‐Yi Tong

Abstract

This paper presents a new explanation of the orientation effect of self-aligned WSix gate GaAs MESFET's by taking the different channel-substrate interfaces formed in the [011] and [011̄] directions due to the piezoelectric charges in GaAs MESFET's into account. The predicted results are in agreement with the measurement data.

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Key concepts: MESFET, Field-effect transistor, Orientation (vector space), Substrate (aquarium), Materials science, Optoelectronics, Channel (broadcasting), Semiconductor