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Some Aspects of PVT Low-Supersaturation Nucleation and Contactless Crystal Growth

K. Grasza, W. Pałosz

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Abstract

The basic principles of the contactless growth of crystals from the vapor in combination with the process of low-supersaturation nucleation are discussed. The mathematical formulation of the morphological stability criterion in vapor growth systems is given and its implications for contactless growth technique are analysed. A diagram for selection of proper temperature conditions for growth of CdTe crystals is presented.

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What this paper is about

The basic principles of the contactless growth of crystals from the vapor in combination with the process of low-supersaturation nucleation are discussed. The mathematical formulation of the morphological stability criterion in vapor growth systems is given and its implications for contactless growth technique are analysed. A diagram for selection of proper temperature conditions for growth of CdTe crystals is presented.

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Available abstract

The basic principles of the contactless growth of crystals from the vapor in combination with the process of low-supersaturation nucleation are discussed. The mathematical formulation of the morphological stability criterion in vapor growth systems is given and its implications for contactless growth technique are analysed. A diagram for selection of proper temperature conditions for growth of CdTe crystals is presented.

Key concepts: Supersaturation, Nucleation, Crystal growth, Crystal (programming language), Materials science, Diagram, Chemical physics, Thermodynamics

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