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The mechanism of atomic layer epitaxy of GaAs using trimethylgallium and arsine

Akito WATANABE, T. Kamijoh, M. Hata, Toshiro Isu, Y. Katayama

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Key concepts: Trimethylgallium, Arsine, Atomic layer epitaxy, Epitaxy, Layer (electronics), Mechanism (biology), Chemistry, Materials science

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