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2013•Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physicsRequires access

AlGaAs anode heterojunction PIN diodes

Timothy Boles, J. Brogle, David Hoag, D.J. Carlson

Open publisher page 5 citations

Abstract

Abstract This paper describes the development of a heterojunction AlGaAs/GaAs PIN diode as a revolutionary improvement as compared to the homojunction GaAs PIN diode commonly used in microwave systems for commercial and military applications. In a heterojunction device the injected carriers from the junction are confined by the bandgap discontinuity between the AlGaAs/GaAs layers. This confinement effectively reduces the series resistance within the I‐region of a PIN diode. Simulations of both single and double heterojunction PIN diodes predict a significant improvement in the return loss and insertion loss as compared to an equivalent GaAs PIN structure. In particular, the single heterojunction PIN diode, when simulated at a bias of 10 mA, indicates a factor of two reduction in high frequency insertion loss. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Abstract This paper describes the development of a heterojunction AlGaAs/GaAs PIN diode as a revolutionary improvement as compared to the homojunction GaAs PIN diode commonly used in microwave systems for commercial and military applications. In a heterojunction device the injected carriers from the junction are confined by the bandgap discontinuity between the AlGaAs/GaAs layers. This confinement effectively reduces the series resistance within the I‐region of a PIN diode. Simulations of both single and double heterojunction PIN diodes predict a significant improvement in the return loss and insertion loss as compared to an equivalent GaAs PIN structure. In particular, the single heterojunction PIN diode, when simulated at a bias of 10 mA, indicates a factor of two reduction in high frequency insertion loss. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Available abstract

Abstract This paper describes the development of a heterojunction AlGaAs/GaAs PIN diode as a revolutionary improvement as compared to the homojunction GaAs PIN diode commonly used in microwave systems for commercial and military applications. In a heterojunction device the injected carriers from the junction are confined by the bandgap discontinuity between the AlGaAs/GaAs layers. This confinement effectively reduces the series resistance within the I‐region of a PIN diode. Simulations of both single and double heterojunction PIN diodes predict a significant improvement in the return loss and insertion loss as compared to an equivalent GaAs PIN structure. In particular, the single heterojunction PIN diode, when simulated at a bias of 10 mA, indicates a factor of two reduction in high frequency insertion loss. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Key concepts: Homojunction, Heterojunction, Diode, Optoelectronics, PIN diode, Materials science, Equivalent series resistance, Microwave

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