Gallium Arsenide Esaki Diodes for High-Frequency Applications

Esaki diodes which show promise of usefulness into the millimeter-wave region have been made from both p- and n-type gallium arsenide. Both diodes were alloyed junctions having point contact geometry and dimensions. The fabrication of these diodes is briefly described, and their initial performance as oscillators in mechanically simple circuits is discussed. Fundamental oscillations to 103 kMc have been obtained.