Infrared continuous-wave laser gain in neodymium aluminum borate: A promising candidate for microchip diode-pumped solid state lasers
Daniel Jaque, O. Enguita, J. Garcı́a Solé, A. D. Jiang, Z.D. Luo
Abstract
Daniel Jaque, O. Enguita, J. Garcı́a Solé, A. D. Jiang, Z.D. Luo
Abstract
In this letter, continuous-wave laser gain at 1.06 and 1.3 μm is demonstrated in the neodymium aluminum borate [NdAl3(BO3)4] system. End pumping is achieved by means of a tunable argon-pumped Ti:sapphire and a diode laser. We report on low absorbed pump power at threshold and high pump-to-laser conversion efficiencies (up to 43% and 25% for laser oscillations at 1.06 and 1.3 μm, respectively) in a 0.3 mm long crystal. These good laser properties together with some other spectroscopic parameters described in this work (such as a 100% absorbance, a broad absorption spectrum around 800 nm and high emission cross section at 1.3 μm) make NdAl3(BO3)4 a promising material for diode-pumped microchip lasers.
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In this letter, continuous-wave laser gain at 1.06 and 1.3 μm is demonstrated in the neodymium aluminum borate [NdAl3(BO3)4] system. End pumping is achieved by means of a tunable argon-pumped Ti:sapphire and a diode laser. We report on low absorbed pump power at threshold and high pump-to-laser conversion efficiencies (up to 43% and 25% for laser oscillations at 1.06 and 1.3 μm, respectively) in a 0.3 mm long crystal. These good laser properties together with some other spectroscopic parameters described in this work (such as a 100% absorbance, a broad absorption spectrum around 800 nm and high emission cross section at 1.3 μm) make NdAl3(BO3)4 a promising material for diode-pumped microchip lasers.
Key concepts: Laser, Materials science, Neodymium, Ti:sapphire laser, Diode-pumped solid-state laser, Optoelectronics, Laser pumping, Diode