2000Applied Physics LettersRequires access

Infrared continuous-wave laser gain in neodymium aluminum borate: A promising candidate for microchip diode-pumped solid state lasers

Daniel Jaque, O. Enguita, J. Garcı́a Solé, A. D. Jiang, Z.D. Luo

Open publisher page 57 citations

Abstract

In this letter, continuous-wave laser gain at 1.06 and 1.3 μm is demonstrated in the neodymium aluminum borate [NdAl3(BO3)4] system. End pumping is achieved by means of a tunable argon-pumped Ti:sapphire and a diode laser. We report on low absorbed pump power at threshold and high pump-to-laser conversion efficiencies (up to 43% and 25% for laser oscillations at 1.06 and 1.3 μm, respectively) in a 0.3 mm long crystal. These good laser properties together with some other spectroscopic parameters described in this work (such as a 100% absorbance, a broad absorption spectrum around 800 nm and high emission cross section at 1.3 μm) make NdAl3(BO3)4 a promising material for diode-pumped microchip lasers.

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What this paper is about

In this letter, continuous-wave laser gain at 1.06 and 1.3 μm is demonstrated in the neodymium aluminum borate [NdAl3(BO3)4] system. End pumping is achieved by means of a tunable argon-pumped Ti:sapphire and a diode laser. We report on low absorbed pump power at threshold and high pump-to-laser conversion efficiencies (up to 43% and 25% for laser oscillations at 1.06 and 1.3 μm, respectively) in a 0.3 mm long crystal. These good laser properties together with some other spectroscopic parameters described in this work (such as a 100% absorbance, a broad absorption spectrum around 800 nm and high emission cross section at 1.3 μm) make NdAl3(BO3)4 a promising material for diode-pumped microchip lasers.

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Available abstract

In this letter, continuous-wave laser gain at 1.06 and 1.3 μm is demonstrated in the neodymium aluminum borate [NdAl3(BO3)4] system. End pumping is achieved by means of a tunable argon-pumped Ti:sapphire and a diode laser. We report on low absorbed pump power at threshold and high pump-to-laser conversion efficiencies (up to 43% and 25% for laser oscillations at 1.06 and 1.3 μm, respectively) in a 0.3 mm long crystal. These good laser properties together with some other spectroscopic parameters described in this work (such as a 100% absorbance, a broad absorption spectrum around 800 nm and high emission cross section at 1.3 μm) make NdAl3(BO3)4 a promising material for diode-pumped microchip lasers.

Key concepts: Laser, Materials science, Neodymium, Ti:sapphire laser, Diode-pumped solid-state laser, Optoelectronics, Laser pumping, Diode

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