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2007•Journal of Applied PhysicsRequires access

Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells

R. Kudrawiec, H. B. Yuen, Seth R. Bank, Hopil Bae, Mark A. Wistey, James S. Harris, M. Motyka, J. Misiewicz

Open publisher page 22 citations

Abstract

A fruitful approach to study the Fermi level position in GaInNAs/GaAs quantum wells (QWs) has been proposed in this paper. This approach utilizes contactless electroreflectance (CER) spectroscopy and a very simple design of semiconductor structures. The idea of this design is to insert a GaInNAs quantum well (QW) into a region of undoped GaAs layer grown on n-type GaAs substrate. The possible pinning of the Fermi level in the GaInNAs QW region modifies band bending in this system. In CER spectra both QW transitions and GaAs-related Franz-Keldysh oscillations (FKOs) are clearly observed. The analysis of QW transitions allows one to determine the band gap discontinuity at GaInNAs/GaAs interface whereas the analysis of FKOs allows one to determine the built-in electric field in the GaAs cap layer, and, finally, one is able to find the Fermi level pinning in GaInNAs QW region.

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What this paper is about

A fruitful approach to study the Fermi level position in GaInNAs/GaAs quantum wells (QWs) has been proposed in this paper. This approach utilizes contactless electroreflectance (CER) spectroscopy and a very simple design of semiconductor structures. The idea of this design is to insert a GaInNAs quantum well (QW) into a region of undoped GaAs layer grown on n-type GaAs substrate. The possible pinning of the Fermi level in the GaInNAs QW region modifies band bending in this system. In CER spectra both QW transitions and GaAs-related Franz-Keldysh oscillations (FKOs) are clearly observed. The analysis of QW transitions allows one to determine the band gap discontinuity at GaInNAs/GaAs interface whereas the analysis of FKOs allows one to determine the built-in electric field in the GaAs cap layer, and, finally, one is able to find the Fermi level pinning in GaInNAs QW region.

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Available abstract

A fruitful approach to study the Fermi level position in GaInNAs/GaAs quantum wells (QWs) has been proposed in this paper. This approach utilizes contactless electroreflectance (CER) spectroscopy and a very simple design of semiconductor structures. The idea of this design is to insert a GaInNAs quantum well (QW) into a region of undoped GaAs layer grown on n-type GaAs substrate. The possible pinning of the Fermi level in the GaInNAs QW region modifies band bending in this system. In CER spectra both QW transitions and GaAs-related Franz-Keldysh oscillations (FKOs) are clearly observed. The analysis of QW transitions allows one to determine the band gap discontinuity at GaInNAs/GaAs interface whereas the analysis of FKOs allows one to determine the built-in electric field in the GaAs cap layer, and, finally, one is able to find the Fermi level pinning in GaInNAs QW region.

Key concepts: Quantum well, Fermi level, Condensed matter physics, Band bending, Gallium arsenide, Optoelectronics, Materials science, Band gap

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