ScholarLens Back to search
2007•ECS TransactionsOpen access

Small-Batch Reactor Development for Silicon Epitaxial Film Growth Based on Theory of Transport Phenomena

Hitoshi Habuka, Hisashi Sakakibara, Masayuki Kawaoka, Kenichi Arimura, Lance Scudder, Akira Okabe

Open full text 2 citations

Abstract

Transport phenomena and surface reaction rate in the small- batch horizontal cold-wall silicon epitaxial reactor at atmospheric pressure are studied using computational fluid dynamics. According to the effect and the role of the gas inlet in a trichlorosilane-hydrogen system, the combination of two or three gas inlet zones is considered to achieve the uniform epitaxial film profile. The susceptor rotation rate is also a parameter to adjust the film thickness profile.

Open-access reader

About this research paper

What this paper is about

Transport phenomena and surface reaction rate in the small- batch horizontal cold-wall silicon epitaxial reactor at atmospheric pressure are studied using computational fluid dynamics. According to the effect and the role of the gas inlet in a trichlorosilane-hydrogen system, the combination of two or three gas inlet zones is considered to achieve the uniform epitaxial film profile. The susceptor rotation rate is also a parameter to adjust the film thickness profile.

Why it matters

OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Transport phenomena and surface reaction rate in the small- batch horizontal cold-wall silicon epitaxial reactor at atmospheric pressure are studied using computational fluid dynamics. According to the effect and the role of the gas inlet in a trichlorosilane-hydrogen system, the combination of two or three gas inlet zones is considered to achieve the uniform epitaxial film profile. The susceptor rotation rate is also a parameter to adjust the film thickness profile.

Key concepts: Trichlorosilane, Susceptor, Epitaxy, Materials science, Inlet, Silicon, Growth rate, Transport phenomena

Related papers

Related paper 1Related paper 2
Back to paper searchBrowse research topicsOriginal source
Small-Batch Reactor Development for Silicon Epitaxial Film Growth Based on Theory of Transport Phenomena — Research Paper | ScholarLens