1998•Applied Physics LettersRequires access
On the nitridation of silicon by low energy nitrogen bombardment
M. Petravić, J. S. Williams, M. Conway, Prakash N. K. Deenapanray
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Abstract
High-resolution Rutherford backscattering and channeling has been used to study the formation of surface nitrides during room temperature bombardment of silicon with nitrogen in a secondary ion mass spectrometry system. Slightly N-rich silicon nitride is formed at angles of incidence (to the surface normal) <27°. Nitrogen buildup profile exhibits several intense oscillations before reaching a constant level. Implanted metals were found to show little tendency for segregation under nitrogen bombardment even when a silicon nitride layer forms at the surface.