2010•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access

Modeling study for developing CdZnTe(CdSe)/CIGS tandem solar cells

Yuanzhang Xiao, Z. Q. Li, Michel Lestrade, Z. M. S. Li

Abstract

Based on Crosslight APSYS, single junction ZnTe/CdSe, CdZnTe/CdSe and CIGS/CdS solar cells as well as CdZnTe(CdSe)/CIGS tandem cells are modeled. Basic physical quantities like band diagrams, optical absorption and generation are obtained. Quantum efficiency and I-V curves are presented. The results are discussed with respect to the interface recombination velocity and the related material defect trap states for ZnTe/CdSe single junction solar cells and the top TCO layer affinity for tandem cells. The projected efficiency obtained is 28% for one of the modeled twoterminal tandem cells. The modeling results give possible clues for developing CdZnTe(CdSe)/CIGS tandem solar cells with increased efficiency.

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Key concepts: Copper indium gallium selenide solar cells, Tandem, Optoelectronics, Materials science, Absorption (acoustics), Quantum efficiency, Quantum dot solar cell, Layer (electronics)