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1989•Electronics LettersRequires access

Submicron scaling of AlGaAs/GaAs self-aligned thin emitter heterojunction bipolar transistors (SATE-HBT) with current gain independent of emitter area

R. J. Malik, L.M. Lunardi, R. W. Ryan, S.C. Shunk, M.D. Feuer

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Abstract

A new, self-aligned process technology for AlGaAs/GaAs heterojunction bipolar transistors (HBT) has been developed, which is based upon ultrathin (100–200 Å) AlGaAs emitter layers. The thin AlGaAs emitter is used as a selective etch stop layer for contacting the p+ base layer and acts as an integral surface passivation layer which eliminates recombination currents in the extrinsic base region. This novel technology yields transistors with emitter dimensions as small as 0.3 × 4.0 µm2 and current gain values independent of emitter area.

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What this paper is about

A new, self-aligned process technology for AlGaAs/GaAs heterojunction bipolar transistors (HBT) has been developed, which is based upon ultrathin (100–200 Å) AlGaAs emitter layers. The thin AlGaAs emitter is used as a selective etch stop layer for contacting the p+ base layer and acts as an integral surface passivation layer which eliminates recombination currents in the extrinsic base region. This novel technology yields transistors with emitter dimensions as small as 0.3 × 4.0 µm2 and current gain values independent of emitter area.

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OpenAlex reports 28 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

A new, self-aligned process technology for AlGaAs/GaAs heterojunction bipolar transistors (HBT) has been developed, which is based upon ultrathin (100–200 Å) AlGaAs emitter layers. The thin AlGaAs emitter is used as a selective etch stop layer for contacting the p+ base layer and acts as an integral surface passivation layer which eliminates recombination currents in the extrinsic base region. This novel technology yields transistors with emitter dimensions as small as 0.3 × 4.0 µm2 and current gain values independent of emitter area.

Key concepts: Common emitter, Heterojunction bipolar transistor, Bipolar junction transistor, Optoelectronics, Passivation, Materials science, Heterostructure-emitter bipolar transistor, Heterojunction

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