1986•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access

Scanning Deep Level Transient Spectroscopy (DLTS) Of GaAs

Frederik Sporon-Fiedler, Eicke R. Weber

Abstract

The use of scanning deep level transient spectroscopy (SDLTS) in the investigation of deep level trap distributions in LEC GaAs is described. Technique is based on electron beam induced current transients in a Schottky barrier, allowing approx. 1 micron spatial resolution. Results indicating enhanced hole trap concentrations around dislocation cores and walls are presented.

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Key concepts: Deep-level transient spectroscopy, Materials science, Spectroscopy, Transient (computer programming), Trap (plumbing), Dislocation, Schottky barrier, Schottky diode