An Integral Charge Control Model of Bipolar Transistors

We present in this paper a compact model of bipolar transistors, suitable for network analysis computer programs. Through the use of a new charge control relation linking junction voltages, collector current, and base charge, the model includes high injection effects. The performance substantially exceeds that of existing models of comparable complexity. For low bias and with some additional idealization, the model reduces to the conventional Ebers-Moll model.