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2008•Japanese Journal of Applied PhysicsOpen access

Effects of Spectral Characteristics of Backlight Sources on Photo-Leakage Currents of Hydrogenated Amorphous Silicon Thin Film Transistor

Sung Jae Hong, Sang Jik Kwon, Eou‐Sik Cho

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Abstract

For various light sources used as backlight systems such as a cold cathode fluorescent lamp (CCFL) or a white light-emitting diode (LED), the photo-leakage characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) were analyzed and described in terms of the relationship between the spectral characteristics of light sources and the mechanism for the generation of electron–hole pairs. From the spectral analysis of the light sources, the leakage current is thought to be related to the wavelength of the peak intensity because the absorption coefficient of the a-Si:H layer is inversely proportional to the wavelength. In the case of a higher wavelength of peak intensity, the photo-leakage characteristics showed improvements in the leakage level and in the on/off current ratio despite similar luminance.

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For various light sources used as backlight systems such as a cold cathode fluorescent lamp (CCFL) or a white light-emitting diode (LED), the photo-leakage characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) were analyzed and described in terms of the relationship between the spectral characteristics of light sources and the mechanism for the generation of electron–hole pairs. From the spectral analysis of the light sources, the leakage current is thought to be related to the wavelength of the peak intensity because the absorption coefficient of the a-Si:H layer is inversely proportional to the wavelength. In the case of a higher wavelength of peak intensity, the photo-leakage characteristics showed improvements in the leakage level and in the on/off current ratio despite similar luminance.

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Available abstract

For various light sources used as backlight systems such as a cold cathode fluorescent lamp (CCFL) or a white light-emitting diode (LED), the photo-leakage characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) were analyzed and described in terms of the relationship between the spectral characteristics of light sources and the mechanism for the generation of electron–hole pairs. From the spectral analysis of the light sources, the leakage current is thought to be related to the wavelength of the peak intensity because the absorption coefficient of the a-Si:H layer is inversely proportional to the wavelength. In the case of a higher wavelength of peak intensity, the photo-leakage characteristics showed improvements in the leakage level and in the on/off current ratio despite similar luminance.

Key concepts: Backlight, Materials science, Amorphous silicon, Optoelectronics, Thin-film transistor, Leakage (economics), Wavelength, Optics

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Effects of Spectral Characteristics of Backlight Sources on Photo-Leakage Currents of Hydrogenated Amorphous Silicon Thin Film Transistor — Research Paper | ScholarLens