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2013•ECS TransactionsOpen access

A Two-Step Electrical Degradation Behavior in α-InGaZnO Thin-Film Transistor

Tung Ming Pan, Fa‐Hsyang Chen, Ching-Hung Chen, Ching-Chang Lin, Chieh Cheng, Fu‐Hsiang Ko, Wu‐Hsiung Lin, Po‐Hsueh Chen, Jim-Long Her, Yasuhiro H. Matsud

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Abstract

In this study, we explored the threshold voltage instability behavior in amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT). A tow-step electrical degradation behavior of α-IGZO TFT was found under gate-bias stress. A usual small positive shift followed by a special negative shift of threshold voltage is characterized in the α-IGZO TFT. We suggest that the positive shift of the threshold voltage is because of charge trapping in the gate dielectric and/or at the channel/dielectric interface, while the negative shift of threshold voltage may be attributed to electric field induced extra electron carriers from H2O molecules in the back channel protective layer.

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In this study, we explored the threshold voltage instability behavior in amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT). A tow-step electrical degradation behavior of α-IGZO TFT was found under gate-bias stress. A usual small positive shift followed by a special negative shift of threshold voltage is characterized in the α-IGZO TFT. We suggest that the positive shift of the threshold voltage is because of charge trapping in the gate dielectric and/or at the channel/dielectric interface, while the negative shift of threshold voltage may be attributed to electric field induced extra electron carriers from H2O molecules in the back channel protective layer.

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Available abstract

In this study, we explored the threshold voltage instability behavior in amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT). A tow-step electrical degradation behavior of α-IGZO TFT was found under gate-bias stress. A usual small positive shift followed by a special negative shift of threshold voltage is characterized in the α-IGZO TFT. We suggest that the positive shift of the threshold voltage is because of charge trapping in the gate dielectric and/or at the channel/dielectric interface, while the negative shift of threshold voltage may be attributed to electric field induced extra electron carriers from H2O molecules in the back channel protective layer.

Key concepts: Thin-film transistor, Threshold voltage, Materials science, Amorphous solid, Optoelectronics, Transistor, Gate dielectric, Degradation (telecommunications)

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