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2010•Unpublished venueRequires access

A 19-ppm/°C Bandgap Voltage Reference Source

Shibin Lu, Ying Meng

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Abstract

In this paper, a high-precision and low temperature coefficient CMOS band gap voltage reference source is presented. Prototype of the circuit is simulated using charted 0.35-μm CMOS process. The power supply is 2.5 V. The output voltage reference exhibits 915.4±0.15 mV variation when the supply changes from 2.0 V to 3.0 V at room temperature. The power dissipation is less than 0.2 mW at 2.5 V supply voltage. The simulated results of this circuit using Eldo of Mentor Graphics Corporation show that the temperature coefficient is about 19-ppm/°C.

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What this paper is about

In this paper, a high-precision and low temperature coefficient CMOS band gap voltage reference source is presented. Prototype of the circuit is simulated using charted 0.35-μm CMOS process. The power supply is 2.5 V. The output voltage reference exhibits 915.4±0.15 mV variation when the supply changes from 2.0 V to 3.0 V at room temperature. The power dissipation is less than 0.2 mW at 2.5 V supply voltage. The simulated results of this circuit using Eldo of Mentor Graphics Corporation show that the temperature coefficient is about 19-ppm/°C.

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Available abstract

In this paper, a high-precision and low temperature coefficient CMOS band gap voltage reference source is presented. Prototype of the circuit is simulated using charted 0.35-μm CMOS process. The power supply is 2.5 V. The output voltage reference exhibits 915.4±0.15 mV variation when the supply changes from 2.0 V to 3.0 V at room temperature. The power dissipation is less than 0.2 mW at 2.5 V supply voltage. The simulated results of this circuit using Eldo of Mentor Graphics Corporation show that the temperature coefficient is about 19-ppm/°C.

Key concepts: Bandgap voltage reference, Voltage reference, CMOS, Voltage, Line regulation, Temperature coefficient, Electrical engineering, Materials science

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