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An Analytical Approach for Studying Diffusion and Drift Effects of Positrons at the Metal/Semi-Insulating GaAs Interface

Yongfeng Hu, S. Fung, Christopher D. Beling

Abstract

The positron diffusion and drift in Semi-insulating(SI) GaAs has been studied by the slowpositron beam technique in metal/GaAs Schottky contact systems. A three layer model involving a metal overlayer, an extended interfacial region and the bulk was adopted for which an analytical method for finding the distribution of positrons under an applied uniform electric field is presented. Results from these calculations are found to be good agreement with our experimental data and VEPFIT fitting results.

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Key concepts: Materials science, Diffusion, Interface (matter), Engineering physics, Metal, Positron, Condensed matter physics, Nanotechnology