1997•Semiconductor Science and TechnologyOpen access
Multiple-gated submicron vertical tunnelling structures
D. G. Austing, Takashi Honda, Seigo Tarucha
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Abstract
We propose and demonstrate a new hybrid technology for fabricating submicron vertical resonant tunnelling structures with separate gates which has the potential to allow single-electron charging of, and single-electron tunnelling through, quantum dot structures containing just a `few' electrons to be investigated in new ways.
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