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Landau Damping of Magnetoplasma Excitations in Many‐Valley Semiconductors

Philip R. Wallace

Open publisher page 7 citations

Abstract

Abstract Theoretical calculations are made of the effect of Landau damping and Doppler‐shifted cyclotron damping on the transverse (helicon‐like) and longitudinal (plasma) excitations of a many‐valley semiconductor such as PbTe or Ge in an external magnetic field, in the Faraday configuration. It is shown that Landau damping dominates only for low‐frequency helicon modes. For higher‐frequency modes, Landau damping is present, but generally occurs only in the frequency ranges in which Doppler‐shifted cyclotron damping is already present.

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Abstract Theoretical calculations are made of the effect of Landau damping and Doppler‐shifted cyclotron damping on the transverse (helicon‐like) and longitudinal (plasma) excitations of a many‐valley semiconductor such as PbTe or Ge in an external magnetic field, in the Faraday configuration. It is shown that Landau damping dominates only for low‐frequency helicon modes. For higher‐frequency modes, Landau damping is present, but generally occurs only in the frequency ranges in which Doppler‐shifted cyclotron damping is already present.

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Available abstract

Abstract Theoretical calculations are made of the effect of Landau damping and Doppler‐shifted cyclotron damping on the transverse (helicon‐like) and longitudinal (plasma) excitations of a many‐valley semiconductor such as PbTe or Ge in an external magnetic field, in the Faraday configuration. It is shown that Landau damping dominates only for low‐frequency helicon modes. For higher‐frequency modes, Landau damping is present, but generally occurs only in the frequency ranges in which Doppler‐shifted cyclotron damping is already present.

Key concepts: Landau damping, Condensed matter physics, Semiconductor, Physics, Landau quantization, Damping off, Quantum electrodynamics, Plasma

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