Growth and photoluminescence study of ZnTe quantum dots
Min Liao, Y. H. Change, Chia-Wei Tsai, M. H. Chieng, Y. F. Chen
Abstract
Min Liao, Y. H. Change, Chia-Wei Tsai, M. H. Chieng, Y. F. Chen
Abstract
ZnTe quantum dots embedded in ZnS were grown successfully by controlling the flow duration in a metalorganic chemical vapor deposition system. Blueshift as large as 250 meV was observed in photoluminescence measurement, and the emission persists up to room temperature. The amount of blueshift decreases with increasing quantum dot size and for large quantum dots, no photoluminescence could be detected. From studying the temperature-dependent integrated intensity of the emission spectra, it is found that the activation energy for the quenching of photoluminescence increases with decreasing quantum dot size, and is identified as the binding energy of exciton in ZnTe quantum dot.
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ZnTe quantum dots embedded in ZnS were grown successfully by controlling the flow duration in a metalorganic chemical vapor deposition system. Blueshift as large as 250 meV was observed in photoluminescence measurement, and the emission persists up to room temperature. The amount of blueshift decreases with increasing quantum dot size and for large quantum dots, no photoluminescence could be detected. From studying the temperature-dependent integrated intensity of the emission spectra, it is found that the activation energy for the quenching of photoluminescence increases with decreasing quantum dot size, and is identified as the binding energy of exciton in ZnTe quantum dot.
Key concepts: Photoluminescence, Blueshift, Quantum dot, Exciton, Quenching (fluorescence), Optoelectronics, Chemical vapor deposition, Materials science