2006•Unpublished venueRequires access

Device Analysis of Linearity in RF Power Devices by Harmonic Balance Device Simulation

O. Tornblad, Gordon Ma, R.W. Dutton

Abstract

Low distortion is one of the most important concerns for current and next-generation wireless communication systems. In this work, the linearity of RF power MOS devices are analysed by using a unique harmonic balance device simulator. Sweet-spots in the third order intermodulation distortion product (IM3) were investigated and interpreted in terms of bias and device design parameters. The demonstrated methodology helps in laying ground-work for improved device design and investigation of new device concepts for improved linearity

About this research paper

What this paper is about

Why it matters

OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Key concepts: Intermodulation, Linearity, Total harmonic distortion, Harmonic balance, Distortion (music), Electronic engineering, Radio frequency, Power (physics)