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2014•Journal of the Korean Institute of Electrical and Electronic Material EngineersOpen access

Regular Paper : Semiconductor ; Properties of the ZnS Thin Film Buffer Layer by Chemical Bath Deposition Process with Different Solution Concentrations and Deposition Time

Kyeongtae Son, Jongwan Kim, Minyoung Kim, Junchul Shin, Sunghee Jo, Donggun Lim

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Abstract

In this study, chemical bath deposition method was used to grow Zinc sulfide(ZnS) thin filmsfrom NH3/SC(NH2)2/ZnSO4 solutions at 90℃. ZnS thin films have been prepared onto ITO glass. Theconcentrations of ZnSO4 and NH were varied while the concentration of Thiourea was fixed in 0.52 M. Structural, optical, electrical characteristic of ZnS thin films were measured. The physical and opticalproperties of different ZnS thin films were influenced severely by the concentration of the two reactingchemicals. The optimal concentration of ZnSO4 and NH3 was 0.085 M and 1.6 M, respectively.

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In this study, chemical bath deposition method was used to grow Zinc sulfide(ZnS) thin filmsfrom NH3/SC(NH2)2/ZnSO4 solutions at 90℃. ZnS thin films have been prepared onto ITO glass. Theconcentrations of ZnSO4 and NH were varied while the concentration of Thiourea was fixed in 0.52 M. Structural, optical, electrical characteristic of ZnS thin films were measured. The physical and opticalproperties of different ZnS thin films were influenced severely by the concentration of the two reactingchemicals. The optimal concentration of ZnSO4 and NH3 was 0.085 M and 1.6 M, respectively.

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Available abstract

In this study, chemical bath deposition method was used to grow Zinc sulfide(ZnS) thin filmsfrom NH3/SC(NH2)2/ZnSO4 solutions at 90℃. ZnS thin films have been prepared onto ITO glass. Theconcentrations of ZnSO4 and NH were varied while the concentration of Thiourea was fixed in 0.52 M. Structural, optical, electrical characteristic of ZnS thin films were measured. The physical and opticalproperties of different ZnS thin films were influenced severely by the concentration of the two reactingchemicals. The optimal concentration of ZnSO4 and NH3 was 0.085 M and 1.6 M, respectively.

Key concepts: Chemical bath deposition, Thin film, Thiourea, Deposition (geology), Zinc sulfide, Materials science, Layer (electronics), Zinc

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Regular Paper : Semiconductor ; Properties of the ZnS Thin Film Buffer Layer by Chemical Bath Deposition Process with Different Solution Concentrations and Deposition Time — Research Paper | ScholarLens