1992•Crystal Research and TechnologyRequires access

Dependence of Energy Band Gap and Lattice Constant of III‐V Semiconductors on Electronegativity Difference of the Constituent Elements

Gong Xiuying, Fengsheng Gao, Tomuo Yamaguchi, Hirofumi Kan, Masashi Kumagawa

Abstract

Abstract The dependence of the energy bandgap and lattice constant of III‐V semiconductors on the electronegativity difference of the constituent elements were investigated. Some empirical expressions for estimating the energy bandgap and lattice constant with respect to solid compositions for mixed crystals were obtained. The results for some material systems predicted by electronegativity difference approach (ENDA) are compared with those obtained experimentally and those calculated by classical interpolation techniques (IT). The agreement between them is quite good, and it is demonstrated that ENDA is a simple and useful method for designing III‐V mixed crystals.

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Key concepts: Electronegativity, Band gap, Lattice constant, Semiconductor, Lattice (music), Condensed matter physics, Chemistry, Electronic band structure