Hollow Boron Nitride (BN) Nanocages and BN‐Nanocage‐Encapsulated Nanocrystals
Yingchun Zhu, Yoshio Bando, Longwei Yin, Dmitri V. Golberg
Abstract
Yingchun Zhu, Yoshio Bando, Longwei Yin, Dmitri V. Golberg
Abstract
Hollow boron nitride (BN) nanocages (nanospheres, image on the left) and BN-nanocage-encapsulated GaN nanocrystals (right) have been synthesized by using a homemade B-N-O precursors. The as-prepared BN hollow nanocages have typically spherical morphologies with diameters ranging from 30 to 200 nm. The nanocages have crystalline structures. Peanutlike nanocages with double walls have also been observed; their internal space is divided into seperated compartments by the internal walls. The method is extended to sheathe nanocrystals with BN nanocages; BN-shell/GaN-core nanostructures have been successfully fabriacted. The method may be generally applicable to the fabrication BN-sheathed nanocrystals.
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Hollow boron nitride (BN) nanocages (nanospheres, image on the left) and BN-nanocage-encapsulated GaN nanocrystals (right) have been synthesized by using a homemade B-N-O precursors. The as-prepared BN hollow nanocages have typically spherical morphologies with diameters ranging from 30 to 200 nm. The nanocages have crystalline structures. Peanutlike nanocages with double walls have also been observed; their internal space is divided into seperated compartments by the internal walls. The method is extended to sheathe nanocrystals with BN nanocages; BN-shell/GaN-core nanostructures have been successfully fabriacted. The method may be generally applicable to the fabrication BN-sheathed nanocrystals.
Key concepts: Nanocages, Boron nitride, Nanocrystal, Materials science, Nanotechnology, Fabrication, Nitride, Chemical engineering