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2007•Conference proceedingsRequires access

Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs

Shuji Nakamura, Steven P. DenBaars, James S. Speck, Mathew C. Schmidt, K-C Kim, Robert M. Farrell, Daniel Feezell, Daniel A. Cohen, Makoto Saitô, Hitoshi Sato, Hirokuni Asamizu, Anurag Tyagi, Hongxia Zhong, Hisashi Masui, Natalie Fellows, Michael Iza, Tadao Hashimoto, K. Fujito

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Abstract

Violet InGaN/GaN light emitting diodes (LEDs) was fabricated on semipolar GaN bulk substrates. The output power and external quantum efficiency at a driving current of 20 mA were measured. The first nonpolar m-plane nitride laser diodes (LDs) were realized on low extended defect bulk m-plane GaN substrates.

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What this paper is about

Violet InGaN/GaN light emitting diodes (LEDs) was fabricated on semipolar GaN bulk substrates. The output power and external quantum efficiency at a driving current of 20 mA were measured. The first nonpolar m-plane nitride laser diodes (LDs) were realized on low extended defect bulk m-plane GaN substrates.

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Available abstract

Violet InGaN/GaN light emitting diodes (LEDs) was fabricated on semipolar GaN bulk substrates. The output power and external quantum efficiency at a driving current of 20 mA were measured. The first nonpolar m-plane nitride laser diodes (LDs) were realized on low extended defect bulk m-plane GaN substrates.

Key concepts: Light-emitting diode, Optoelectronics, Materials science, Diode, Wide-bandgap semiconductor, Gallium nitride, Nitride, Quantum efficiency

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