Ohmic contacts to p-type cadmium telluride and cadmium mercury telluride
E. Janik, R. Triboulet
Abstract
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E. Janik, R. Triboulet
Abstract
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The different techniques of making ohmic contacts to p-type CdTe are reviewed and discussed. Mercury telluride, whose work-function matches perfectly that of p-type CdTe, is shown to be more favourable than Au or Pt. The HgTe contacts deposited by close spacing isothermal growth present a room temperature specific contact resistance ten times lower than so far reported. Hall effect measurements have been performed down to low temperatures on several undoped p-type CdTe and Cd 0.7 Hg 0.3 Te crystals. Ionisation energies of 0.05-0.07 and 0.13 eV for CdTe and 0.024 eV for Cd 0.7 Hg 0.3 Te have been determined and the nature of the responsible centres discussed.
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The different techniques of making ohmic contacts to p-type CdTe are reviewed and discussed. Mercury telluride, whose work-function matches perfectly that of p-type CdTe, is shown to be more favourable than Au or Pt. The HgTe contacts deposited by close spacing isothermal growth present a room temperature specific contact resistance ten times lower than so far reported. Hall effect measurements have been performed down to low temperatures on several undoped p-type CdTe and Cd 0.7 Hg 0.3 Te crystals. Ionisation energies of 0.05-0.07 and 0.13 eV for CdTe and 0.024 eV for Cd 0.7 Hg 0.3 Te have been determined and the nature of the responsible centres discussed.
Key concepts: Cadmium telluride photovoltaics, Mercury cadmium telluride, Ohmic contact, Telluride, Cadmium, Mercury (programming language), Chemistry, Materials science