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2009•FerroelectricsRequires access

Compatibility of Material Processing and Fabrication of Sol-Gel Derived PZT Based Devices

Jyh‐Cheng Yu, Junxiang Wu, T.H. Yeh, Chen‐Chia Chou

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Abstract

This study investigates the compatibility of material processing and fabrication of micro devices based on sol-gel derived lead zirconate titanate (PZT) thin films. High temperature annealing of sol-gel derived PZT may cause cracking and diffusion of structure layers. The introduction of a buffer layer, (LaxSr 1 − x )MnO 3 , between PZT thin film and metal electrodes improves PZT crystallization and ferroelectricity. Annealing temperature of PZT/LSMO structure using furnace heating is investigated and compared with CO 2 laser annealing. A parameter study of PZT poling shows the improvement of film properties. The fabrication procedures of two exemplar devices, a micro accelerometer and a FPW acoustic sensor illustrate the interaction issues among material structures and processes.

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What this paper is about

This study investigates the compatibility of material processing and fabrication of micro devices based on sol-gel derived lead zirconate titanate (PZT) thin films. High temperature annealing of sol-gel derived PZT may cause cracking and diffusion of structure layers. The introduction of a buffer layer, (LaxSr 1 − x )MnO 3 , between PZT thin film and metal electrodes improves PZT crystallization and ferroelectricity. Annealing temperature of PZT/LSMO structure using furnace heating is investigated and compared with CO 2 laser annealing. A parameter study of PZT poling shows the improvement of film properties. The fabrication procedures of two exemplar devices, a micro accelerometer and a FPW acoustic sensor illustrate the interaction issues among material structures and processes.

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Available abstract

This study investigates the compatibility of material processing and fabrication of micro devices based on sol-gel derived lead zirconate titanate (PZT) thin films. High temperature annealing of sol-gel derived PZT may cause cracking and diffusion of structure layers. The introduction of a buffer layer, (LaxSr 1 − x )MnO 3 , between PZT thin film and metal electrodes improves PZT crystallization and ferroelectricity. Annealing temperature of PZT/LSMO structure using furnace heating is investigated and compared with CO 2 laser annealing. A parameter study of PZT poling shows the improvement of film properties. The fabrication procedures of two exemplar devices, a micro accelerometer and a FPW acoustic sensor illustrate the interaction issues among material structures and processes.

Key concepts: Materials science, Fabrication, Annealing (glass), Lead zirconate titanate, Poling, Ferroelectricity, Sol-gel, Thin film

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Compatibility of Material Processing and Fabrication of Sol-Gel Derived PZT Based Devices — Research Paper | ScholarLens