J. Scott Hale
Abstract
GeGaAs heterojunctions obtained by evaporation of a 2 μm thick Ge layer have been studied. Electroreflectance of infrared radiations has been a valuable means in determining the existence of an interface state band located (0.50 ± 0.02) eV from the conduction band of Ge. The photovoltaïc effect supports this interpretation.
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GeGaAs heterojunctions obtained by evaporation of a 2 μm thick Ge layer have been studied. Electroreflectance of infrared radiations has been a valuable means in determining the existence of an interface state band located (0.50 ± 0.02) eV from the conduction band of Ge. The photovoltaïc effect supports this interpretation.
Key concepts: Heterojunction, Conduction band, Interface (matter), Optoelectronics, Infrared, Materials science, Evaporation, Layer (electronics)