Boris Kobrin, R. M. Kupriyanova, В. С. Минаев, E. P. Prokopiev, V. P. Shantarovich
Abstract
The nature of defects in crystal and glass phases and in transition ranges for the system Ge–Te is studied by the positron annihilation technique. Additional evidence of positronium formation in semiconductors is obtained.
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The nature of defects in crystal and glass phases and in transition ranges for the system Ge–Te is studied by the positron annihilation technique. Additional evidence of positronium formation in semiconductors is obtained.
Key concepts: Positronium, Positron annihilation, Positron, Annihilation, Semiconductor, Germanium, Crystal (programming language), Physics