2000Applied Physics LettersRequires access

Optical properties of multiple layers of self-organized InAs quantum dots emitting at 1.3 μm

J. Bloch, Jagdeep Shah, L. N. Pfeiffer, K. W. West, S. N. G. Chu

Open publisher page 41 citations

Abstract

We report the growth and characterization of multiple layers of self-organized InAs quantum dots emitting near 1.3 μm. We analyze their optical properties as a function of the number of dot layers and investigate how the vertical stack modifies the dot size distribution.

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What this paper is about

We report the growth and characterization of multiple layers of self-organized InAs quantum dots emitting near 1.3 μm. We analyze their optical properties as a function of the number of dot layers and investigate how the vertical stack modifies the dot size distribution.

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Available abstract

We report the growth and characterization of multiple layers of self-organized InAs quantum dots emitting near 1.3 μm. We analyze their optical properties as a function of the number of dot layers and investigate how the vertical stack modifies the dot size distribution.

Key concepts: Quantum dot, Stack (abstract data type), Characterization (materials science), Materials science, Optoelectronics, Function (biology), Quantum dot laser, Condensed matter physics

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