2010•Unpublished venueRequires access

Performance evaluation of all SiC power converters for realizing high power density of 50 W/cm3

Kazuto Takao, Shinsuke Harada, Takashi Shinohe, Hiromichi Ohashi

Abstract

In high-power density power converter designs, power losses of power devices are essential design parameters because they determines the volume of cooling systems. The power loss of a SiC power module using a SiC Implantation and Epitaxial MOSFET (SiC-IEMOSFET) has been evaluated in the junction temperature range from 150°C to 250°C and the current density range from 100 A/cm2to 250 A/cm2. By using the power loss data, design criteria of the junction temperature and current density of the SiC-IEMOSFET to realize the power density of 50W/cm3have been extracted.

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Key concepts: Power density, Junction temperature, Power (physics), Converters, Range (aeronautics), Electrical engineering, Atmospheric temperature range, Materials science