ScholarLens Back to search
1995•Journal of Applied PhysicsRequires access

Electron-paramagnetic-resonance spectra in as-grown CdGeAs2

L. E. Halliburton, G. J. Edwards, Peter G. Schunemann, T. M. Pollak

Open publisher page 19 citations

Abstract

Electron-paramagnetic-resonance (EPR) has been used to investigate point defects in a single crystal of as-grown CdGeAs2. Spectra taken at 17 K with the magnetic field parallel to the c axis show a broad signal (∼165 Gauss wide) centered on gc=2.018 and a sharper signal (∼56 G wide) centered on gc=2.015. Together, these signals represent an unpaired-spin concentration of approximately 5×1019 cm−3. A single broad signal (∼165 G wide) centered on ga=1.995 is observed at 17 K when the magnetic field is along the a axis. It is suggested that these dominant EPR-active defects in CdGeAs2 consist of either a cation vacancy or an antisite cation with the unpaired spin shared by the four neighboring As ions. Additional weak EPR lines appear when the temperature is increased (from 17 to 40 K) and the microwave power is decreased (from 7 to 2.3 mW).

About this research paper

What this paper is about

Electron-paramagnetic-resonance (EPR) has been used to investigate point defects in a single crystal of as-grown CdGeAs2. Spectra taken at 17 K with the magnetic field parallel to the c axis show a broad signal (∼165 Gauss wide) centered on gc=2.018 and a sharper signal (∼56 G wide) centered on gc=2.015. Together, these signals represent an unpaired-spin concentration of approximately 5×1019 cm−3. A single broad signal (∼165 G wide) centered on ga=1.995 is observed at 17 K when the magnetic field is along the a axis. It is suggested that these dominant EPR-active defects in CdGeAs2 consist of either a cation vacancy or an antisite cation with the unpaired spin shared by the four neighboring As ions. Additional weak EPR lines appear when the temperature is increased (from 17 to 40 K) and the microwave power is decreased (from 7 to 2.3 mW).

Why it matters

OpenAlex reports 19 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Electron-paramagnetic-resonance (EPR) has been used to investigate point defects in a single crystal of as-grown CdGeAs2. Spectra taken at 17 K with the magnetic field parallel to the c axis show a broad signal (∼165 Gauss wide) centered on gc=2.018 and a sharper signal (∼56 G wide) centered on gc=2.015. Together, these signals represent an unpaired-spin concentration of approximately 5×1019 cm−3. A single broad signal (∼165 G wide) centered on ga=1.995 is observed at 17 K when the magnetic field is along the a axis. It is suggested that these dominant EPR-active defects in CdGeAs2 consist of either a cation vacancy or an antisite cation with the unpaired spin shared by the four neighboring As ions. Additional weak EPR lines appear when the temperature is increased (from 17 to 40 K) and the microwave power is decreased (from 7 to 2.3 mW).

Key concepts: Electron paramagnetic resonance, Unpaired electron, Ion, Paramagnetism, Vacancy defect, Spectral line, Chemistry, Crystallographic defect

Related papers

Related paper 1Related paper 2
Back to paper searchBrowse research topicsOriginal source
Electron-paramagnetic-resonance spectra in as-grown CdGeAs2 — Research Paper | ScholarLens