Theoretical consideration of misfit dislocation nucleation by partial dislocations in [001] strained-layer heterostructures
Jin Zou, D. J. H. Cockayne
Abstract
Jin Zou, D. J. H. Cockayne
Abstract
The nucleation of misfit dislocations through the extension of dissociated dislocations in the strained interface is considered theoretically. The predicted critical thickness of misfit dislocation nucleation by a dissociated dislocation is compared with that predicted for a perfect dislocation. It is shown that the model of misfit dislocation nucleation by the movement of a dissociated dislocation is more likely.
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The nucleation of misfit dislocations through the extension of dissociated dislocations in the strained interface is considered theoretically. The predicted critical thickness of misfit dislocation nucleation by a dissociated dislocation is compared with that predicted for a perfect dislocation. It is shown that the model of misfit dislocation nucleation by the movement of a dissociated dislocation is more likely.
Key concepts: Nucleation, Dislocation, Materials science, Condensed matter physics, Heterojunction, Partial dislocations, Dislocation creep, Layer (electronics)