1993Journal of Applied PhysicsRequires access

Theoretical consideration of misfit dislocation nucleation by partial dislocations in [001] strained-layer heterostructures

Jin Zou, D. J. H. Cockayne

Open publisher page 20 citations

Abstract

The nucleation of misfit dislocations through the extension of dissociated dislocations in the strained interface is considered theoretically. The predicted critical thickness of misfit dislocation nucleation by a dissociated dislocation is compared with that predicted for a perfect dislocation. It is shown that the model of misfit dislocation nucleation by the movement of a dissociated dislocation is more likely.

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The nucleation of misfit dislocations through the extension of dissociated dislocations in the strained interface is considered theoretically. The predicted critical thickness of misfit dislocation nucleation by a dissociated dislocation is compared with that predicted for a perfect dislocation. It is shown that the model of misfit dislocation nucleation by the movement of a dissociated dislocation is more likely.

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Available abstract

The nucleation of misfit dislocations through the extension of dissociated dislocations in the strained interface is considered theoretically. The predicted critical thickness of misfit dislocation nucleation by a dissociated dislocation is compared with that predicted for a perfect dislocation. It is shown that the model of misfit dislocation nucleation by the movement of a dissociated dislocation is more likely.

Key concepts: Nucleation, Dislocation, Materials science, Condensed matter physics, Heterojunction, Partial dislocations, Dislocation creep, Layer (electronics)

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