2009•Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forumOpen access
Determination of Grain Boundary Diffusion Coefficients in C-Regime by Hwang-Balluffi Method: Silver Diffusion in Pd
Zoltan Balogh, Zoltán Erdélyi, Dezső L. Beke, A. Portavoce, Christophe Girardeaux, J. Bernardini, A. Rolland
Open full text 4 citations
Abstract
Diffusion controlled processes play a crucial role in the degradation of technical materials. At low temperatures the most significant of them is the diffusion along grain boundaries. In thin film geometry one of the best methods for determining the grain boundary (GB) diffusion coefficient of an impurity element is the Hwang-Balluffi method, in which a surface sensitive technique is used to follow the surface accumulation kinetics. Results of grain boundary diffusion measurements, carried out in our laboratory by this method in three different materials systems (Ag/Pd, Ag/Cu and Au/Ni) are reviewed. In case of Ag diffusion along Pd GBs the surface accumulation was followed by AES method. The data points can be well fitted by an Arrhenius function with an activation energy Q=0.99eV