WAVEGUIDE RESONATOR STRUCTURE OF AN ELECTRON-BEAM-PUMPED SEMICONDUCTOR LASER

A method was developed for producing a waveguide resonator structure in an electron-beam- pumped semiconductor laser. When guided waves were excited in such a resonator, the laser threshold was found to be independent of the electron energy and the angular distribution of the output radiation was more complex than for a homogeneous resonator. The use of a waveguide resonator made it possible to reduce the laser threshold to 0.3 A/cm 2 (in the electron energy range 15–20 keV), which was one or two orders of magnitude lower than for a laser with a homogeneous resonator.