2009•Applied Physics LettersRequires access

Transport properties of a quantum dot in quantum Hall regimes probed by a single-electron transistor

J. C. Chen, Mingyang Li, Takuya Ueda, Susumu Komiyama

Open publisher page 6 citations

Abstract

Coulomb blockade oscillations in a semiconductor quantum dot (QD) with two confined Landau levels are investigated by probing a current through a single-electron transistor (SET) fabricated directly on top of the QD. The intradot tunneling events between the compressible regions in the dot are mapped out by measuring SET currents. Our results demonstrate that a SET can be an excellent electrometer that is extremely responsive to the local individual electron tunneling events in a closed electronic system.

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What this paper is about

Coulomb blockade oscillations in a semiconductor quantum dot (QD) with two confined Landau levels are investigated by probing a current through a single-electron transistor (SET) fabricated directly on top of the QD. The intradot tunneling events between the compressible regions in the dot are mapped out by measuring SET currents. Our results demonstrate that a SET can be an excellent electrometer that is extremely responsive to the local individual electron tunneling events in a closed electronic system.

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OpenAlex reports 6 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Coulomb blockade oscillations in a semiconductor quantum dot (QD) with two confined Landau levels are investigated by probing a current through a single-electron transistor (SET) fabricated directly on top of the QD. The intradot tunneling events between the compressible regions in the dot are mapped out by measuring SET currents. Our results demonstrate that a SET can be an excellent electrometer that is extremely responsive to the local individual electron tunneling events in a closed electronic system.

Key concepts: Coulomb blockade, Electrometer, Quantum dot, Quantum tunnelling, Condensed matter physics, Transistor, Electron, Quantum point contact

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