Transport properties of a quantum dot in quantum Hall regimes probed by a single-electron transistor
J. C. Chen, Mingyang Li, Takuya Ueda, Susumu Komiyama
Abstract
J. C. Chen, Mingyang Li, Takuya Ueda, Susumu Komiyama
Abstract
Coulomb blockade oscillations in a semiconductor quantum dot (QD) with two confined Landau levels are investigated by probing a current through a single-electron transistor (SET) fabricated directly on top of the QD. The intradot tunneling events between the compressible regions in the dot are mapped out by measuring SET currents. Our results demonstrate that a SET can be an excellent electrometer that is extremely responsive to the local individual electron tunneling events in a closed electronic system.
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Coulomb blockade oscillations in a semiconductor quantum dot (QD) with two confined Landau levels are investigated by probing a current through a single-electron transistor (SET) fabricated directly on top of the QD. The intradot tunneling events between the compressible regions in the dot are mapped out by measuring SET currents. Our results demonstrate that a SET can be an excellent electrometer that is extremely responsive to the local individual electron tunneling events in a closed electronic system.
Key concepts: Coulomb blockade, Electrometer, Quantum dot, Quantum tunnelling, Condensed matter physics, Transistor, Electron, Quantum point contact