Thermoelectric Characteristics of Sintered SiC/Cu Semiconductors

Measurements of electrical resistivity, thermoelectric power and thermal conductivity were made on sintered SiC semiconductors as a function of both Cu doping concentration (in the range 0.1∼5.0 mass%) and temperature (from room temperature to around 1000 K). In addition, Hall coefficient measurements, X-ray crystallography, EPMA and ICP analysis were performed. The electrical resistivity of n-type (electron) conduction was found to decrease drastically by Cu addition. At a Cu concentration of 0.5 mass% and at around 1000 K, the figure of merit Z was estimated to reach 1.4×10-4 K-1. We conclude that Cu is an effective dopant for reducing electrical resistivity and that sintered SiC/Cu is a promising candidate material for use in conventional thermoelectric power generation in addition to self-cooling devices.