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Observation of stable room-temperature photoconductivity in hydrogenated amorphous silicon following long term light soaking

Jiawen Xi, J. Michael L. MacNeil, T. Liu, Malathi Ghosh

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Abstract

Intrinsic hydrogenated amorphous silicon exhibiting unchanged room-temperature photoconductivity of 1.5×10−5 (Ω cm)−1 at 100 mW cm−2 after prolonged illumination and a photo-to-dark conductivity ratio over 106 is reported for the first time. Photoconductivity and CPM data in the as-deposited and light-soaked states, supported by dark conductivity and analytical measurements, suggest that the metastable midgap states in this material are significantly lower than levels previously reported.

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Intrinsic hydrogenated amorphous silicon exhibiting unchanged room-temperature photoconductivity of 1.5×10−5 (Ω cm)−1 at 100 mW cm−2 after prolonged illumination and a photo-to-dark conductivity ratio over 106 is reported for the first time. Photoconductivity and CPM data in the as-deposited and light-soaked states, supported by dark conductivity and analytical measurements, suggest that the metastable midgap states in this material are significantly lower than levels previously reported.

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Available abstract

Intrinsic hydrogenated amorphous silicon exhibiting unchanged room-temperature photoconductivity of 1.5×10−5 (Ω cm)−1 at 100 mW cm−2 after prolonged illumination and a photo-to-dark conductivity ratio over 106 is reported for the first time. Photoconductivity and CPM data in the as-deposited and light-soaked states, supported by dark conductivity and analytical measurements, suggest that the metastable midgap states in this material are significantly lower than levels previously reported.

Key concepts: Photoconductivity, Amorphous silicon, Materials science, Metastability, Silicon, Conductivity, Amorphous solid, Electrical resistivity and conductivity

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