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2002•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access

Effects of Mg doping on the photoconductivity of GaN films deposited by MOCVD

Deheng Zhang, Yunyan Liu

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Abstract

This paper presents the UV photoconductivity properties of GaN films doped with different Mg concentrations deposited by MOCVD. It was observed that for the undoped and weakly doped GaN films the UV photocurrent response was relatively large and the realx time was relatively short. With an increase in doped Mg content, the samples became P type, the photocurrent response become weak and the realx time became long.

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What this paper is about

This paper presents the UV photoconductivity properties of GaN films doped with different Mg concentrations deposited by MOCVD. It was observed that for the undoped and weakly doped GaN films the UV photocurrent response was relatively large and the realx time was relatively short. With an increase in doped Mg content, the samples became P type, the photocurrent response become weak and the realx time became long.

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Available abstract

This paper presents the UV photoconductivity properties of GaN films doped with different Mg concentrations deposited by MOCVD. It was observed that for the undoped and weakly doped GaN films the UV photocurrent response was relatively large and the realx time was relatively short. With an increase in doped Mg content, the samples became P type, the photocurrent response become weak and the realx time became long.

Key concepts: Photoconductivity, Photocurrent, Metalorganic vapour phase epitaxy, Doping, Materials science, Optoelectronics, Nanotechnology, Epitaxy

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