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1980•Journal of Physics D Applied PhysicsOpen access

The resistivity and temperature coefficient of resistivity of polycrystalline rhodium thin films

J. Koshy

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Abstract

The electrical resistivity and temperature coefficient of resistivity of rhodium films (300-200 AA) deposited on glass substrates were measured in situ in the temperature range 20 degrees C-150 degrees C. By comparing experimental data and calculated values from Fuchs' expression (1938) it is concluded that the scattering is completely diffuse for films of thickness greater than 500 AA. The mean-free-path values deduced from resistivity data and TCR measurements are in good agreement with each other.

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The electrical resistivity and temperature coefficient of resistivity of rhodium films (300-200 AA) deposited on glass substrates were measured in situ in the temperature range 20 degrees C-150 degrees C. By comparing experimental data and calculated values from Fuchs' expression (1938) it is concluded that the scattering is completely diffuse for films of thickness greater than 500 AA. The mean-free-path values deduced from resistivity data and TCR measurements are in good agreement with each other.

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Available abstract

The electrical resistivity and temperature coefficient of resistivity of rhodium films (300-200 AA) deposited on glass substrates were measured in situ in the temperature range 20 degrees C-150 degrees C. By comparing experimental data and calculated values from Fuchs' expression (1938) it is concluded that the scattering is completely diffuse for films of thickness greater than 500 AA. The mean-free-path values deduced from resistivity data and TCR measurements are in good agreement with each other.

Key concepts: Electrical resistivity and conductivity, Temperature coefficient, Atmospheric temperature range, Rhodium, Materials science, Crystallite, Scattering, Thin film

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