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Asymmetry of Slip in Fe‐Si Alloy Single Crystals

B. Šesták, N. Zárubová

Open publisher page 100 citations

Abstract

Abstract The slip planes in Fe–3% Si and Fe–6.5% Si single crystals after slow deformation ( ≈ 10−6 s−1) are studied by four‐point bending at room temperature. It is observed that the slip planes on the tensile and compression sides of the same specimen are different. The course of the critical resolved shear stress SΨ/S110 on the planes of the 〈111〉 zone is derived from the positions of the slip planes. The relative critical resolved shear stress depends on the sense of the resolved shear stress and increases as the silicon content rises. Three microscopic models of slip are discussed: composite slip along the {110} planes, composite slip along the {110} and {112} planes, and non‐crystallographic (banal) slip. The experimental results can be explained most easily by the second model. The possible influence of ordering is also discussed.

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Abstract The slip planes in Fe–3% Si and Fe–6.5% Si single crystals after slow deformation ( ≈ 10−6 s−1) are studied by four‐point bending at room temperature. It is observed that the slip planes on the tensile and compression sides of the same specimen are different. The course of the critical resolved shear stress SΨ/S110 on the planes of the 〈111〉 zone is derived from the positions of the slip planes. The relative critical resolved shear stress depends on the sense of the resolved shear stress and increases as the silicon content rises. Three microscopic models of slip are discussed: composite slip along the {110} planes, composite slip along the {110} and {112} planes, and non‐crystallographic (banal) slip. The experimental results can be explained most easily by the second model. The possible influence of ordering is also discussed.

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Available abstract

Abstract The slip planes in Fe–3% Si and Fe–6.5% Si single crystals after slow deformation ( ≈ 10−6 s−1) are studied by four‐point bending at room temperature. It is observed that the slip planes on the tensile and compression sides of the same specimen are different. The course of the critical resolved shear stress SΨ/S110 on the planes of the 〈111〉 zone is derived from the positions of the slip planes. The relative critical resolved shear stress depends on the sense of the resolved shear stress and increases as the silicon content rises. Three microscopic models of slip are discussed: composite slip along the {110} planes, composite slip along the {110} and {112} planes, and non‐crystallographic (banal) slip. The experimental results can be explained most easily by the second model. The possible influence of ordering is also discussed.

Key concepts: Slip (aerodynamics), Critical resolved shear stress, Asymmetry, Materials science, Shear (geology), Slip line field, Alloy, Condensed matter physics

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