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2010•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access

Ultra-low-noise high-speed single-photon detection using a sinusoidally gated InGaAs/InP avalanche photodiode

Naoto Namekata, Shuichiro Inoue

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Abstract

We report an ultra-low-noise single-photon detection at 1550nm using a 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode. The avalanche photodiode was operated in a low temperature regime ( > 183 K) which can be achieved by a simple electrical cooling system. At 183 K, the dark count probability can be reduced to 2.0×10-7 with a detection efficiency of 9.6 %, while the afterpulsing probability remained at a low value (3 %).

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What this paper is about

We report an ultra-low-noise single-photon detection at 1550nm using a 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode. The avalanche photodiode was operated in a low temperature regime ( > 183 K) which can be achieved by a simple electrical cooling system. At 183 K, the dark count probability can be reduced to 2.0×10-7 with a detection efficiency of 9.6 %, while the afterpulsing probability remained at a low value (3 %).

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Available abstract

We report an ultra-low-noise single-photon detection at 1550nm using a 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode. The avalanche photodiode was operated in a low temperature regime ( > 183 K) which can be achieved by a simple electrical cooling system. At 183 K, the dark count probability can be reduced to 2.0×10-7 with a detection efficiency of 9.6 %, while the afterpulsing probability remained at a low value (3 %).

Key concepts: Avalanche photodiode, Photodiode, Photon counting, Indium gallium arsenide, Optoelectronics, Single-photon avalanche diode, Photodetector, Noise (video)

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