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2003•Chemical Vapor DepositionRequires access

Growth of Lanthanum Silicate Thin Films by Liquid Injection MOCVD Using Tris[bis(trimethylsilyl)amido]lanthanum

Helen C. Aspinall, Paul A. Williams, Jeffrey M. Gaskell, Anthony C. Jones, John L. Roberts, L.M. Smith, Paul R. Chalker, G.W. Critchlow

Open publisher page 23 citations

Abstract

Lanthanum silicate is deposited from a single‐source precursor by injection MOCVD using La[N(SiMe3)2]3 as precursor. The depositions are carried out over 350–600 °C without an additional silicon source. SEM analysis (Figure) shows that deposited films are smooth and featureless. AES analysis indicates that all the films are lanthanum silicate with silicon concentration ranging from 8.5 to 15.2 at.‐%.

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What this paper is about

Lanthanum silicate is deposited from a single‐source precursor by injection MOCVD using La[N(SiMe3)2]3 as precursor. The depositions are carried out over 350–600 °C without an additional silicon source. SEM analysis (Figure) shows that deposited films are smooth and featureless. AES analysis indicates that all the films are lanthanum silicate with silicon concentration ranging from 8.5 to 15.2 at.‐%.

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Available abstract

Lanthanum silicate is deposited from a single‐source precursor by injection MOCVD using La[N(SiMe3)2]3 as precursor. The depositions are carried out over 350–600 °C without an additional silicon source. SEM analysis (Figure) shows that deposited films are smooth and featureless. AES analysis indicates that all the films are lanthanum silicate with silicon concentration ranging from 8.5 to 15.2 at.‐%.

Key concepts: Lanthanum, Silicate, Silicon, Trimethylsilyl, Metalorganic vapour phase epitaxy, Inorganic chemistry, Thin film, Materials science

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