2007Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access

Say good-bye to DOF: statistical process window analysis with inline lithographic process variations

Wenzhan Zhou, Minghao Tang, Huipeng Koh, Meisheng Zhou

Open publisher page 0 citations

Abstract

In this paper we present one application of our new Advanced Lithography Parameters Extraction (ALPE) system in the lithography process window analysis. Compared with traditional DOF/EL based process window analysis or Monte Carlo approaches with pre-assumed process variations, our new approach uses real-life process variations (exposure, focus, and even PEB temperature, etc. if needed) collected by the new ALPE system. Different from pre-assumed process variations and independently measured process variations, all these process variations are directly correlated with inline CD variations, so we call them real-life process variations. Based on these real-life process variations, the estimation of final CD uniformity will be more accurate and objective. Comparing estimated CD uniformity of new process with CD uniformity of baseline process, it is possible for us to tell which process is better from statistical point of view.

About this research paper

What this paper is about

In this paper we present one application of our new Advanced Lithography Parameters Extraction (ALPE) system in the lithography process window analysis. Compared with traditional DOF/EL based process window analysis or Monte Carlo approaches with pre-assumed process variations, our new approach uses real-life process variations (exposure, focus, and even PEB temperature, etc. if needed) collected by the new ALPE system. Different from pre-assumed process variations and independently measured process variations, all these process variations are directly correlated with inline CD variations, so we call them real-life process variations. Based on these real-life process variations, the estimation of final CD uniformity will be more accurate and objective. Comparing estimated CD uniformity of new process with CD uniformity of baseline process, it is possible for us to tell which process is better from statistical point of view.

Why it matters

A significance statement is not available in the OpenAlex record.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

In this paper we present one application of our new Advanced Lithography Parameters Extraction (ALPE) system in the lithography process window analysis. Compared with traditional DOF/EL based process window analysis or Monte Carlo approaches with pre-assumed process variations, our new approach uses real-life process variations (exposure, focus, and even PEB temperature, etc. if needed) collected by the new ALPE system. Different from pre-assumed process variations and independently measured process variations, all these process variations are directly correlated with inline CD variations, so we call them real-life process variations. Based on these real-life process variations, the estimation of final CD uniformity will be more accurate and objective. Comparing estimated CD uniformity of new process with CD uniformity of baseline process, it is possible for us to tell which process is better from statistical point of view.

Key concepts: Process window, Process (computing), Computer science, Lithography, Process variation, Window (computing), Point process, Monte Carlo method

Related papers

Back to paper searchBrowse research topicsOriginal source
Say good-bye to DOF: statistical process window analysis with inline lithographic process variations — Research Paper | ScholarLens