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2005•OFC/NFOEC Technical Digest. Optical Fiber Communication Conference, 2005.Requires access

Effect of erbium ion concentration on gain spectral hole burning in silica-based erbium-doped fiber

S. Ono, Setsuhisa Tanabe, Masato Nishihara, Etsuko Ishikawa

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Abstract

The erbium concentration dependence of gain spectral hole burning in EDF was investigated. We propose the energy transfer mechanism between Er ions, which contributes to the suppression of the second-hole at 1530 nm.

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What this paper is about

The erbium concentration dependence of gain spectral hole burning in EDF was investigated. We propose the energy transfer mechanism between Er ions, which contributes to the suppression of the second-hole at 1530 nm.

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Available abstract

The erbium concentration dependence of gain spectral hole burning in EDF was investigated. We propose the energy transfer mechanism between Er ions, which contributes to the suppression of the second-hole at 1530 nm.

Key concepts: Erbium, Spectral hole burning, Erbium doped fiber amplifier, Materials science, Ion, Doping, Energy transfer, Optoelectronics

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