Jiarui Wu, Z. G. Wang, Lanying Lin, Cheng-gong Han, M. Zhang, S. W. Bai
Abstract
The influence of the sidegate voltage on the Schottky barrier in the ion-implanted active layer via the Schottky pad on the semi-insulating GaAs substrate was observed, and the mechanism for such an influence was proposed.
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The influence of the sidegate voltage on the Schottky barrier in the ion-implanted active layer via the Schottky pad on the semi-insulating GaAs substrate was observed, and the mechanism for such an influence was proposed.
Key concepts: Schottky barrier, Metal–semiconductor junction, Schottky diode, Materials science, Layer (electronics), Optoelectronics, Schottky effect, Substrate (aquarium)