Yoshitaka Murakami, Jinwang Li, Daisuke Hirose, Shinji Kohara, Tatsuya Shimoda
Abstract
Designing of ruthenium–amine complexes leads to preparation of highly conductive thin films of ruthenium (20–40 nm thick) and ruthenium oxide (50–90 nm thick) by a simple solution process.
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Designing of ruthenium–amine complexes leads to preparation of highly conductive thin films of ruthenium (20–40 nm thick) and ruthenium oxide (50–90 nm thick) by a simple solution process.
Key concepts: Ruthenium, Ruthenium oxide, Materials science, Amine gas treating, Oxide, Electrical conductor, Chemical engineering, Organic chemistry