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Fabrication of nanostructured palladium-doped SiO2 films with variable temperature coefficient of resistivity

Takahisa Ichinohe, Susumu Masaki, Kazuo Uchida, Shinji Nozaki, Hiroshi Morisaki

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Key concepts: Electrical resistivity and conductivity, Temperature coefficient, Materials science, Annealing (glass), Variable-range hopping, Atmospheric temperature range, Condensed matter physics, Doping

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Fabrication of nanostructured palladium-doped SiO2 films with variable temperature coefficient of resistivity — Research Paper | ScholarLens