1990•Journal of The Electrochemical SocietyOpen access

Comparison of Boron Profiles by the Spreading Resistance Profile and the Secondary Ion Mass Spectrometry Techniques

R. A. Clapper, D. G. Schimmel, J. C. C. Tsai, F. S. Jabara, F. A. Stevie, P. M. Kahora

Abstract

This paper compares boron profiles measured by spreading resistance and SIMS techniques. The boron samples were prepared under conditions similar to an implanted‐diffused base of an n‐p‐n transistor. Good agreements between the two methods were obtained. Effects of sample preparation on spreading resistance measurements are discussed also.

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Key concepts: Boron, Spreading resistance profiling, Secondary ion mass spectrometry, Analytical Chemistry (journal), Materials science, Mass spectrometry, Base (topology), Ion